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陈星弼

邮箱:xbchen@uestc.edu.cn
电话:028-83201919
系别:微电子与固体电子系
职称:中国科学院院士
教师个人主页:http://faculty.uestc.edu.cn/chenxingbi/zh_CN/index.htm
教师简介
    陈星弼(1931.1~  ),男,生于上海,祖籍浙江省浦江县,国际著名微电子学家,被誉为“中国功率器件领路人”。中国科学院院士,九三学社社员,教授、博士生导师。
    1952年,陈星弼毕业于国立同济大学电机系,先后在厦门大学、南京工学院及中国科学院物理研究所工作。1956年开始在bob体育最新版下载地址任教。1983年任bob体育最新版下载地址微电子科学与工程系系主任、微电子研究所所长。曾先后在美国俄亥俄州立大学、加州大学伯克利分校作访问学者及研究工程师,被聘为加拿大多伦多大学客座教授,英国威尔斯大学天鹅海分校高级客座教授。1999年当选中国科学院院士。曾任电子工业部第十三所专用集成电路国家级重点实验室学术委员会主任委员、四川省科学技术顾问团顾问等等。
    陈星弼是我国第一批学习及从事半导体科技的人员之一,是电子部“半导体器件与微电子学”专业第一个博士生导师且得到第一个博士点。他是国际半导体界著名的超结结构(Super Junction)的发明人,也是国际上功率器件的结终端理论的集大成者。
    陈星弼是第一个在中国制造硅靶摄像管的人。1981年起他开始研究半导体功率器件,在中国首次研制了VDMOST、IGBT、LDMOST、MCT、EST等器件。在国际上第一个提出了各种终端技术的物理解释及解析理论。80年代末他提出了两种新的耐压层结构,并作了唯一的三维电场分析。其中超结结构大大突破了功率器件的硅极限,被称为“功率器件的新里程碑”。其美国发明专利US 5216275已被超过400个美国发明专利引用,中国因此获得78万美元的专利转让费。超结MOS器件已达到约10亿美元的年销售额。他还提出了最佳表面横向变掺杂的理论及横向新结构,无需BCD技术而只用常规IC工艺,就可以最小面积研制出电学性能更好的高低侧功率器件。最近陈院士的其它重要发明包括高K电介质耐压结构、高速IGBT、两种多数载流子导电的器件等,有望做出新的突破。
    他申请美国发明专利21项(已批准20项)、中国发明专利20项(已批准17项)及国际发明专利1项,以第一或合作作者在IEEE TED、IEEE EDL、SSE等权威期刊及ISPSD等著名会议上发表了超过130篇学术论文,在固体物理等方面有著作8部,并翻译了包括俄、德语等2部译著及其它文献。获国家技术发明奖及国家科技进步奖2项,省部级奖励13项,完成国家自然科学基金重点项目、军事研究项目、国家“八五”科技攻关项目多项。
陈星弼是中国电子学会会士,美国IEEE终身高级会员,1991年起享受国务院特殊津贴,1997年被电子工业部授予优秀教师奖,1998年被评为全国优秀教师、四川省学术和技术带头人,1999年被评为成都市劳模。2015年因其对高压功率MOSFET理论与设计的卓越贡献获得IEEE ISPSD 2015 Pioneer Award。
科学研究

1.1 Research Areas

The laboratory's research arears currently focus on Power Semiconductor Device Technologies, Smart Power ICs (SPICs) and ESD protection Devices and Circiuts.


SJ


coolmos

Structure of Super Junction                                    CoolMOS by Infineon utilizing

(Invented by Prof. chen, U.S. patent,5216275,1993)                   Prof. Chen's SJ patent


1.2 Research Conditions

The New Devices Research Laboratory was founded for more than 30 years by Prof. Chen. It is one of the earliest research laboratories of semiconductor power devices of China. The laboratory is one of research teams of the State Key Laboratory of Electronic Thin Films and Integrated Devices.This is an energetic research team with more than 20 specialist staffs. The laboratory has several high performance computer workstations, EDA softwares and a variety of high performance equipments. And the laboratory establishes good cooperative relationships with some of semiconductor companies.


                    spics

OPT-VLD LDMOS                                               Layout of a SPIC utilizing

(Proposed by Prof. Chen)                                                 OPT-VLD LDMOS

Granted U.S. Patents:

[1]  Xingbi Chen. High speed IGBT[P]. US 8378427 B2, 2013.02.19

[2]  Xingbi Chen. Low voltage power supply[P]. US 8294215 B2, 2012.10.23

[3]  Xingbi Chen. Lateral Schottky diode[P]. US 8242533 B2, 2012.08.14 ()

[4]  Xingbi Chen. Lateral high-voltage semiconductor devices with majorities of both types for conduction[P]. US 8159026 B2, 2012.04.17

[5]  Xingbi Chen. Semiconductor device[P]. US 8134206 B2, 2012.03.13

[6]  Xingbi Chen. Semiconductor device with a u-shape drift region[P]. US 7795638 B2, 2010.09.14

[7]  Xingbi Chen. Method of producing a low -voltage power supply in a power integrated circuit[P]. US 7701006 B2, 2010. 04.20

[8]  Xingbi Chen. Lateral high-voltage devices with optimum variation lateral flux by using field plate[P]. US 7659596 B2, 2010.02.09

[9]  Xingbi Chen. Voltage sustaining layer with opposite-doped islands for semiconductor power devices[P]. US 7271067 B2, 2007.09.18

[10] Xingbi Chen. Super-junction voltage sustaining layer with alternating semiconductor and high-K dielectric region[P]. US 7230310 B2, 2007.06.12

[11] Xingbi Chen. Semiconductor high-voltage devices[P]. US 7227197 B2, 2007.06.05

[12] Xingbi Chen. Method of manufacturing semiconductor device having composite buffer layer[P]. US 7192872 B2, 2007.03.20 ()

[13] Xingbi Chen. Lateral low-side and high-side high-voltage devices[P]. US 6998681 B2, 2006.02.14

[14] Xingbi Chen. Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity[P]. US 6936907 B2, 2005.08.30

[15] Xingbi Chen. Semiconductor high-voltage devices[P]. US 6936867 B2, 2005.08.30

[16] Xingbi Chen. Voltage sustaining layer with opposite-doped islands for semiconductor power devices[P]. US 6635906 B1, 2003.10.21

[17] Xingbi Chen. Surface voltage sustaining structure for semiconductor devices having floating voltage terminal[P]. US 6310365 B1, 2001.10.30

[18] Xingbi Chen. Surface voltage sustaining structure for semiconductor devices[P]. US 5726469, 1998.03.10

[19] Xingbi Chen. Semiconductor power devices with alternating conductivity type high-voltage breakdown regions[P]. US 5216275, 1993.06.01


Granted Chinese Patents:

[1]   陈星弼. 用于半导体器件的表面耐压区、半导体器件和电容器[P]. CN 103208516A, 2013.07.17

[2]   陈星弼. 半导体器件的含导电颗粒的绝缘体与半导体构成的耐压层[P]. CN 103137658A, 2013.06.05

[3]   陈星弼. 一种控制两种载流子的晶闸管[P]. CN 102651392A, 2012.08.29

[4]   陈星弼. 低压电源[P]. CN 101719721B, 2012.06.06

[5]   陈星弼. 一种半导体横向器件[P]. CN 101510549B, 2010.12.01

[6]   陈星弼. 一种半导体横向器件和高压器件[P]. CN 101521203B, 2010.08.04

[7]   陈星弼. 一种高速IGBT[P]. CN 101494239B, 2010.12.01

[8]   陈星弼. 一种半导体器件[P]. CN 100592518, 2010.02.24

[9]   陈星弼. 一种半导体器件及其提供的低压电源的应用[P]. CN 100576541, 2009.12.30

[10] 陈星弼. 具有“U”字形漂移区的半导体器件[P]. CN 100592532, 2010.02.24

[11] 陈星弼. 利用场板达到最佳表面横向通量的横向高压器件[P]. CN 100544028, 2009.09.23

[12] 陈星弼. 横向低侧高压器件及高侧高压器件[P]. CN 1311560, 2007.04.18

[13] 陈星弼. 用高介电系数膜的表面(横向)耐压结构[P]. CN 1189945, 2005.02.16

[14] 陈星弼. 一种制造含有复合缓冲层半导体器件的方法[P]. CN 1179397, 2004.12.08

[15] 陈星弼. 一种半导体器件[P]. CN 1181559, 2004.12.22

[16] 陈星弼. 一种用于有浮动电压端的半导体器件的表面耐压层[P]. CN 1099715, 2003.01.22

[17] 陈星弼. 一种用于半导体器件的表面耐压区[P]. CN 1040814, 1998.11.18

[18] 陈星弼. 一种提供高压器件高耐压的表面区结构公开号:1115909, 1996.01.31

[19] 陈星弼. 具有异型掺杂岛的半导体器件耐压层[P]. CN 1035294, 1997.06.25

[20] 陈星弼. 半导体功率器件[P]. CN 1019720B, 1993.08.11


Journal and Conference Publication:

[1]   Xingbi Chen, Mingmin Huang. A vertical power MOSFET with an interdigitated drift region using high-k insulator[J]. IEEE Tran. Electron Devices, 2012, 59(9): 2430-2437

[2]   陈星弼. 超结器件[J]. 电力电子技术, 2008, 42(12): 2-7

[3]   陈星弼. 由半导体微电子技术引起的第一次电子革命及第二次电子革命[C]. 第十六届全国电源技术年会, 2005, 32-36

[4]   Xingbi Chen, Hongqiang Yang, Min Cheng. New silicon limit of power devices[J]. Solid-State Electronics, 2002, 46: 1185-1192

[5]   Xingbi Chen, Xuefeng Fan. Optimum VLD makes SPIC better and cheaper[C]. Proc. ICSICT, 2001, 104-108

[6]   Xingbi Chen, K. O. Sin. Optimization of the specific on-resistance of the COOLMOS[J]*. IEEE Trans. Electron Devices, 2001, 48(2): 344-348

[7]   Xingbi Chen. Theory of the switching response of CBMOST[J]. Chinese Journal of Electronics, 2001, 10(1): 1-6

[8]   陈星弼, 蒲慕名, 张瑞敏, 车俊, 尚选玉, 于庆成, 杜彭. 我的创新与财富观[J]. 中国青年科技, 2001, (2): 32-38

[9]   陈星弼. 第一次电子革命及第二次电子革命[J]. 微型电脑应用, 2000, 16(8): 5-9

[10] Xingbi Chen, Xin Wang, K. O. Sin. A novel high-voltage sustaining structure with buried oppositely doped regions[J]. IEEE Trans. Electron Devices, 2000, 47(6): 1280-1285

[11] 陈星弼. 科技为本 创新为魂——由半导体技术引起的重大革命[J]. 世界电子元器件, 2000, (6): 7-11

[12] 陈星弼. 由半导体微电子技术引起的第一次电子革命及第二次电子革命[J]. bob体育最新版下载地址学报社科版, 2000, 2(2): 20-25

[13] Xingbi Chen. Optimum design parameters for different patterns of CB-structure[J]. Chinese Journal of Electronics, 2000, 9(1): 6-11

[14] 陈星弼, 叶星宁, 唐茂成, 王新, 苏秀娣, 单成国. 新型CMOS全兼容二极管[J]. bob体育最新版下载地址学报, 1999

[15] Xingbi Chen. Breakthrough to the silicon limit of power devices (invited Paper)[J]. Proc. ICSICT, 1998, 141-144

[16] 陈星弼, 叶永萌. 对高等学校人才培养的思考和看法[J]. 中国电子学会教育分会主办, 1998, 13-15

[17] Xingbi Chen, P. A. Mawby, K. Board, C. A. T. Salama. Theory of a novel voltage sustaining layer for power devices[J]. Microelectronics Journal, 1998, 29(12): 1055-1011

[18] Xingbi Chen. Theory of a novel voltage sustaining (CB) layer for power devices[J]. Chinese Journal of Electronics, 1998, 7(3): 211-216

[19] 陈星弼. 用于灵巧功率集成电路的创新型横向器件[C]. 第二届中国西部地区微电子技术年会论文集(四川、重庆、广西、甘肃、云南六地市), 1998, 1-7

[20] Xingbi Chen, K. O. Sin, Min Zhang, Bin Wang. An analytical model for electric field distribution of positively beveled abrupt PN junctions[J]. IEEE Trans. Electron Devices, 1997, 44(5): 869-873

[21] Xingbi Chen, P. A. Mawby, C. A. T. Salama, M. S. Towers, J. Zeng, K. Board. Lateral high-voltage devices using an optimized variational lateral doping[J]. Int. J. Electronics, 1996, 80(3): 449-459

[22] 陈星弼. 半导体器件与微电子学的发展动向[C]. 当代电子, 四川省电子学会主编, 1992, 4-94

[23] 陈星弼, 曾军. 扩散平面结反偏压下的电场分布与击穿电压[J]. bob体育最新版下载地址学报, 1992, 21(5): 491-499

[24] Xingbi Chen, Bo Zhang and Zhaoji Li. Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping[J]. Solid State Electronics, 1992, 35(9): 1365-1370

[25] 陈星弼. 结终端技术[C]. 第七届全国半导体集成技术与硅材料学术年会特邀报告, 1991

[26] Xingbi Chen. Power MOST and merged devices[C]. Proc. of congress of German Chinese Electronics, Berlin. Offenbach, 1991, 339-345

[27] 陈星弼. MOS 型功率器件[J]. 电子学报, 1990, 18(5): 97-105

[28] 陈星弼. 功率MOS及HVIC的进展[C]. 第六届全国半导体集成技术与硅材料学术年会特邀报告, 1989

[29] Xingbi Chen, Zhaoji Li and Zhongmin Li. Field profiles and breakdown voltage of elliptic cylindric abrupt junction[C]. Proc. ICSICT, 1989, 459-461

[30] Xingbi Chen. A simple description of diffused impurity distribution of an instantaneous source through a window of a mask[C]. Proc. ICSICT, 1989, 241-243

[31] Xingbi Chen. Analysis and design guideline of JTT’s used in planar technology[C]. Proc. ICSICT, 1989, 456-459

[32] Xingbi Chen. A theory of floating field limiting rings regarding the effect of surface charges[J]. Acta Electronica Sinica, Supplement, Mat, 1989, 105-112

[33] 陈星弼, 李肇基, 李忠民. 关于圆柱边界突变结的击穿电压[J]. 半导体学报,1989, 10(6): 463-466

[34] 陈星弼. 表面电荷对具有场限环的p+-n 结电场及电位分布的影响[J]. 电子学报, 1988, 16(5): 14-19

[35] 陈星弼, 杨功铭. 横向结构深结功率MOSFET漂移区的优化设计[J]. 微电子学, 1988, 18(4): 42-49

[36] 陈星弼. 场限环的简单理论[J]. 电子学报, 1988, 16(3): 6-9

[37] 陈星弼, 李肇基, 蒋旭. 高压半导体器件电场的二维数值分析[J]. 半导体学报, 1988, 9(3): 255-261

[38] 陈星弼, 李肇基, 宋志庆. 高压半导体器件电场的二维数值分析[J]. bob体育最新版下载地址学报, 1988, 17(1): 46-53

[39] Xingbi Chen, Zhiqing Song and Zhaoji Li. Optimization of the drift region of power MOSFET’s with lateral structures and deep junctions[J]. IEEE Trans. Electron Devices, 1987, 34(11): 2344-2350

[40] Xingbi Chen. Best uniform surface doping in the drift region of offset-gate power MOSFET’s with deep junction[C]. Proc. ICSICT, 1986, 383-385

[41] 陈星弼, 蒋旭. 突变平面结表面电场的近似公式[J]. 成都电讯工程学院学报, 1986, 15(3): 34-40

[42] 陈星弼. p-n+结有场板时表面电场分布的简单表示式[J]. 电子学报, 1986, 14(1): 36-43

[43] Xingbi Chen and Chenming Hu. Optimum doping profiles of power MOSFET epitaxial layer[J]. IEEE Trans. Electron Devices, 1982, 29(6): 985-987

[44] 陈星弼, 易明銧. 小注入下晶体管IC-VBE特性的指数因子的研究[J]. 物理学报, 1978, 2(1): 10-21

[45] 陈星弼. 论晶体管中电荷控制法的基础[C].四川省电子学会第二届学术年会论文集, 1964, 168-185

[46] 陈星弼. 一维不均匀介质中的镜像法[J]. 成都电讯工程学院学报, 1963, 4(3): 76-84

[47] 陈星弼. 表面复合对半导体中非平衡载流子漂移及扩散的影响[J]. 成都电讯工程学院学报, 1963, 4(?): 100

[48] 陈星弼. 关于半导体漂移三极管在饱和区工作时的储存时间问题[J]. 物理学报, 1959, 15(7): 353-367



[49] Xinjiang Lyu, Xingbi Chen. An ultralow specific ON-resistance LDMOST using charge balance by split p-gate and n-drift regions[J]. IEEE Trans. Electron Devices, 2013, 60(11): 3821-3826

[50] Moufu Kong, Xingbi Chen. Study on dual channel n-p-LDMOS power devices with three terminals[J]. IEEE Trans. Electron Devices, 2013, 60(10): 3508-3514

[51] Zhi Lin, Hao Hu, Junji Cheng and Xingbi Chen. A Versatile Low-cost Smart Power Technology Platform for Applications over Broad Current and Voltage Ranges[C]. Proc. BCTM, 2013, 93-96

[52] Moufu Kong, Xingbi Chen. Novel high-voltage, high-side and low-side power devices with a single control signal[J]. Journal of Semiconductor, 2013, 34(9): 094009-(1-5)

[53] Junji Cheng, Xingbi Chen. New planar junction edge termination technique using OPTVLD with a buried layer[J]. IEEE Trans. Electron Devices, 2013, 60(7): 2428-2431

[54] Moufu Kong, Xingbi Chen. A novel isolation method for half-bridge power ICs[J]. IEEE Trans. Electron Devices, 2013, 60(7): 2318-2323

[55] Haimeng Huang, Xingbi Chen. New expressions for non-punch-through and punch-through abrupt parallel-plane junctions based on Chynoweth law[J]. Journal of Semiconductor, 2013, 34(7): 074003-(1-5)

[56] Haimeng Huang, Xingbi Chen. An analytical model for the electric field distributions of buried superjunction devices[J]. Journal of Semiconductor, 2013, 34(6): 064006-(1-4)

[57] Liheng Zhu, Xingbi Chen. A Novel Snapback-Free Reverse Conducting IGBT with Anti-parallel Shockley Diode. Proc. ISPSD, 2013, 261-264

[58] Junji Cheng, Xingbi Chen. A novel low-side structure for OPTVLD-SPIC technologically compatible with BiCMOS[C]. Proc. ISPSD, 2013, 123-126

[59] Xinjiang Lyu, Xingbi Chen. Vertical power Hk-MOSFET of hexagonal layout[J]. IEEE Trans. Electron Devices, 2013, 60(5): 1709-1715

[60] Haimeng Huang, Xingbi Chen. Optimization of specific on-resistance of semisuperjunction trench MOSFETs with charge balance[J]. IEEE Trans. Electron Devices, 2013, 60(3): 1195-1201

[61] Junji Cheng, Xingbi Chen. A practical approach to enhance yield of OPTVLD products[J]. IEEE Electron Device Letters, 2013, 34(2): 289-291


[62] Liheng Zhu, Xingbi Chen. An investigation of a novel snapback free reverse-conducting IGBT and with dual gates[J]. IEEE Trans. Electron Devices, 2012, 59(11): 3048-3053

[63] Moufu Kong, Xingbi Chen. High voltage low side and high side power devices based on VLD technique[C]. Proc. ICSICT, 2012, 996-998

[64] Haimeng Huang, Xingbi Chen. Optimization of specific on-resistance of balanced symmetric superjunction MOSFETs based on a better approximation of ionization integral[J]. IEEE Trans. Electron Devices, 2012, 59(10): 2742-2747

[65] Junji Cheng, Xingbi Chen. Hot-carrier reliability in OPTVLD-LDMOS[J]. Journal of Semiconductors, 2012, 33(6): 064003-(1-4)

[66] Junji Cheng, Xingbi Chen. Low specific on-resistance p-type OPTVLD-LDMOS with double hole-conductive paths for SPIC application[C]. Proc. ISPSD, 2012, 225-228

[67] Hao Hu, Zhi Lin, Xingbi Chen. A novel high voltage start-up current source for SMPS[C]. Proc. ISPSD, 2012, 197-200

[68] Hao Hu, Xingbi Chen. A novel high speed lateral IGBT with a self-driven second gate[J]. Journal of Semiconductors, 2012, 33(3): 034004-(1-4)


[69] 王永维, 陈星弼. 一种具有独特导通机理的新型超结IGBT[J]. 固体电子学研究与进展, 2011, 31(6): 545-548, 600

[70] Wenfang Du, Xingbi Chen. A study of second saturation effect of OPTVLD NMOS[C]. Proc. ASICON, 2011, 551-554

[71] Haimeng Huang, Yongwei Wang, Xingbi Chen. An analytical model for SOI triple RESURF devices[C]. Proc. ASICON, 2011, 547-550

[72] Junhong Li, Ping Li, Weirong Huo, Guojun Zhang, Yahong Zhai, Xingbi Chen. Analysis and fabrication of an LDMOS with high-permittivity dielectric[J]. IEEE Electron Device Letters, 2011, 32(9): 1266-1268


[73] Qimeng Jiang, Minzhi Wang, Xingbi Chen. A high-speed deep-trench MOSFET with a self-biased split gate[J]. IEEE Trans. Electron Devices, 2010, 57(8): 1972-1977

[74] Xinjiang Lv, Xingbi Chen. An integrated low voltage power supply with self-voltage-clamped characteristic[C]. Proc. ICSICT, 2010, 114-116

[75] Xuqiang Zhu, Xingbi Chen. A novel electrostatic discharge protection design based on SCR[C].Proc. ICSICT, 2010, 950-952

[76] Hao Hu, Xingbi Chen. A novel high voltage start up circuit for an integrated switched mode power supply[J]. Journal of Semiconductors, 2010, 31(9): 094012-(1-4)

[77] 朱利恒, 蒋其梦, 陈星弼. 具有更宽安全工作区的IGBT元胞的研究与设计[J]. 微电子学, 2010, 40(6): 904-907

[78] Hao Hu, Xingbi Chen. A novel PMOS controlled high voltage current source[C]. Proc. ICCCAS, 2010, 514-517

[79] Hao Hu, Xingbi Chen. A simple expression for impurity distribution after multiple diffusion processes[J]. Journal of Semiconductors, 2010, 31(5): 052004-(1-4)


[80] Jizhi Liu, Xingbi Chen. A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure[J]. Journal of Semiconductors, 2009, 30(12): 125001-(1-6)

[81] Jizhi Liu, Xingbi Chen. A novel self-generated low-voltage power supply for the gate-driver of high-voltage off-line SMPS[C]. Proc. ISPSD, 2009, 184-187

[82] Jizhi Liu, Xingbi Chen. A new level-shifting structure with multiply metal rings by divided RESURF technique[J]. Journal of Semiconductors, 2009, 30(4): 044005-(1-5)

[83] Lina Guo, Youling Yu, Weisheng Xu, Zhaogen Jiang, Xingbi Chen. A novel control technique for digital power factor correction[C]. Proc. ICSICT, 2006, 2070-2072

[84] 李梅芝, 陈星弼. 栅压对LDMOS在异常大电流下工作的影响[J]. 半导体学报, 2007, 28(8): 1256-1261

[85] 李梅芝, 陈星弼. LDMOS开关在不同频率下的热安全工作[J]. 半导体学报, 2007, 28(6): 938-942

[86] 李梅芝, 陈星弼. 栅压对LDMOS在异常大电流下工作的影响[J]. 微电子学, 2007, 37(4): 478-481

[87] 郭丽娜, 陈星弼, 许维胜, 余有灵. 一种新的基于DSP的数字功率因数校正控制策略[J]. 电子技术应用, 2007, (2): 21-23

[88] 李梅芝, 郭超, 陈星弼. LDMOS在正常开关工作下的瞬态热效应[J]. 半导体学报, 2006, 27(11): 1989-1993

[89] Lina Guo, Weisheng Xu, Ying Lu, Zhiyu Xu, Xingbi Chen. A novel voltage sensor-less control technique synthesis for a boost AC/DC pre-regulator[C]. Proc. ICARCV, 2006,

[90] 郭丽娜, 陈星弼. 灵巧功率集成电路中功率MOSFET电流感知方法的研究[J]. 现代电子技术, 2006, (2): 108-109, 112

[91] 刘继芝, 陈星弼, 李定. 一种用于开关电源启动电路的新型自偏置高压器件结构[J]. 半导体学报, 2006, 27(1): 132-136

[92] 李梅芝, 韦光萍, 陈星弼. LDMOS 的局部电热效应分析[J]. 半导体学报, 2005, 26(9): 1823-1828

[93] 郭丽娜, 陈星弼. 电子镇流器中智能过流保护的简易实现方法[J]. 灯与照明, 2005, 29(3): 41-42

[94] 潘飞蹊, 陈星弼. MLD 结构快恢复二极管trr-T 特性的理论分析[J]. 半导体学报, 2005, 26(1): 126-132

[95] 潘飞蹊, 陈星弼. 高功率因数Boost变换器电流滞环控制的一种简单实现方案[J]. 电子学报, 2004, 32(8): 1330-1333

[96] 潘飞蹊, 陈星弼. 一种Boost型PFC变频控制电路的简单实现方案[J]. 电力电子技术, 2004, 38(1): 30-32


[97] 杨洪强, 郭丽娜, 郭超, 韩磊, 陈星弼. 具有电阻场板的薄膜 SOI-LDMOS 的精确解析[J]. 半导体学报, 2003, 24(9): 977-982

[98] 潘飞蹊, 陈星弼. 用Buck-Boost变换器实现PFC和半桥驱动输出[J]. 电力电子技术, 2003, 37(6): 17-20

[99] Hongqiang Yang, Lei Han, Xingbi Chen. Improvement of electrical performance of SOI-LIGBT by resistive field plate[J]. Journal of Semiconductors, 2002, 23(10): 1014-1018

[100]  郭丽娜, 成民, 杨洪强, 陈星弼. 一种新型的荧光灯电子镇流器用振荡电路的简易实现方法[J]. 电子器件, 2002, 25(4): 313-318

[101]  Hongqiang Yang, Xingbi Chen. A high speed IGBT based on dynamic controlled anode-short[J]. Journal of Semiconductors, 2002, 23(4): 347-351

[102]  Jin He, Ru Huang, Xing Zhang, Yangyuan Wang, Xingbi Chen. Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring[J]. Solid-State Electronics, 2001, 45(1): 79-85

[103]  Hongqiang Yang, Xingbi Chen. IGBT with dynamic controlled anode-short used in power IC[C]. Proc. ICSICT, 2001, 120-122

[104]  Lei Han, Xingning Ye, Xingbi Chen. A novel high-voltage detector integrated into SPIC by using FFLR[J]. Journal of Semiconductors, 2001, 22(10): 1250-1254

[105]  杨洪强, 陈星弼. 半桥式功率输出级中高速低功耗低侧管的实现[J]. 电子学报, 2001, 29(6): 1-3

[106]  何进, 王新, 陈星弼. 基于SDB技术的新结构PT型IGBT器件研制[J]. 半导体学报, 2000, 21(9): 877-881

[107]  何进, 陈星弼, 王新. 直接键合硅片的三步亲水处理法及界面电特性[J]. 功能材料, 2000, 31(1): 58-59

[108]  陈雪英, 陈星弼. 关于荧光灯电子镇流器的报告. 第二届中国西部地区微电子技术学术年会, 1999

[109]  何进, 王新, 陈星弼. VDMOS均匀掺杂外延区的优化设计[J]. 半导体学报, 1999, 20(11): 977-982

[110]  Jin He, Xin Wang, Xingbi Chen. Study on interfacial SiO2 layer of silicon direct bonding[J]. Journal of Semiconductors, 1999, 20(4): 319-323

[111]  Jin He, Xin Wang, Xingbi Chen. Analytical calculation of avalanche breakdown voltage of the single-diffused junction based on double-sided asymmetric linearly graded approximation[J]. Journal of Semiconductors, 1999, 20(7): 612-618

[112]  Jin He, Xin Wang, Xingbi Chen. Closed analytical solution of breakdown voltage for planar junction and lateral curvature effect[J]. Journal of Semiconductors, 1999, 20(9): 753-758

[113]  何进, 陈星弼, 王新. 硅片直接键合的微观动力学研究[J]. 半导体技术, 1999, 24(6): 33-35

[114]  何进, 王新, 陈星弼. 硅-硅直接键合界面上SiO2的非稳定性[J]. bob体育最新版下载地址学报, 1999, 28(5): 494-497

[115]  何进, 王新, 陈星弼. 硅-硅直接键合的亲水处理机界面电特性[J]. 微电子学, 1999, 29(5): 353-357

[116]  何进, 陈星弼, 杨传仁, 王新. 直接键合硅片的亲水处理及其表征[J]. 半导体技术, 1999, 24(5): 23-25

[117]  何进, 陈星弼, 王新. VDMOS均匀掺杂外延区优化设计的简单理论[J]. 电子器件, 1999, 22(3): 143-148

[118]  何进, 陈星弼, 杨传仁, 刘世程. TiO2(Ag)纳米半导体薄膜的制备及其光催化性能[J]. 电子元件与材料, 1999, 18(1): 13-16

[119]  何进, 陈星弼. C-2CH复合型PTCR薄膜[J]. 电子元件与材料, 1998, 10(4): 6-11

[120]  张波, 陈星弼, 李肇基. JTE结的二维电场分析[J]. 半导体学报, 1993, 14(10): 626-632

[121]  曾军, 李肇基, 陈星弼. 有场限环和横向变掺杂的平面结二极管电场分布的二维数值分析[J]. 电子学报, 1992, 20(5): 18-24

[122]  Zhaoji Li, Xingbi Chen, Hongquan Yu. Analysis of thermal characteristics of VDMOS power transistors[J]. Solid-State Electronics, 1991, 34(3): 225-231

[123]  李肇基, 俞洪全, 陈星弼. VDMOS全热程的温度分布[J]. 半导体学报, 1990, 11(6): 435-440

[124]  李肇基, 李忠民, 陈星弼. p-n结电场分布的一种解析法[J]. 半导体学报, 1990, 11(2): 144-147

[125]  李肇基, 陈星弼, 曾军. 功率器件有JTE结构的电场的数值分析与模拟[J]. bob体育最新版下载地址学报, 1989, 18(4): 362-367

[126]  李肇基, 陈星弼, 曾军. 高压功率器件特性的数值分析[J]. bob体育最新版下载地址学报, 1989, 18(3): 296-300

[127]  李志奇, 陈星弼. LDMOS功率场效应晶体管的设计与研制[J]. 微电子学, 1988, 18(3): 1-7

[128]  李智, 陈星弼, 黄勤. 功率VD-MOSFET饱和区中的漏特性[J]. 成都电讯工程学院学报, 1988, 17(2): 167-173

[129]  J. V. 哈烈孟, 陈星弼. 高频铁磁材料与铁淦氧磁物材料—II[J]. 电信科学, 1956, (3): 30-34

[130]  J. V. 哈烈孟, 陈星弼. 高频铁磁材料与铁淦氧磁物材料—I[J]. 电信科学, 1956, (2): 21-25


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