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bob体育官网-bob体育最新版下载地址

周琦

邮箱:zhouqi@uestc.edu.cn
电话:028-83201693
系别:微电子与固体电子系
职称:研究员
教师个人主页:
教师简介
   周琦,博士。2012年毕业于香港科技大学获博士学位,同年加入bob体育最新版下载地址微电子与固体电子学院。
   专注于第三代宽禁带新型半导体材料、器件及其集成技术的研究,尤其在氮化镓(GaN)功率器件新结构、模型/器件物理、先进制备工艺与GaN功率集成技术领域具有较好的研究基础。开发出一款硅基GaN(GaN-on-Si)栅控横向功率整流器新结构,器件性能达到国际报道的同类器件最高水平。开发出一种高效、低损伤原子层刻蚀技术,利用该技术制备的增强型GaN高电子迁移率晶体管(HEMT)器件性能达到国际领先水平。研究成果发表于行业顶级期刊《IEEE Electron Device Letters》、《IEEE Trans. on Electron Devices》、《IEEE Microwave and Wireless Components Letter》及国际顶级会议IEDM、ISPSD。目前已在IEEE EDL、IEEE TED、IEEE MWCL等本领域顶级期刊和IEDM、ISPSD等国际顶级会议共发表论文52篇。研究成果被功率半导体世界最著名学者J. B. Baliga (IEEE fellow, 2010年美国国家科学技术奖获得者)发表于Semicond. Sci. and Tech.的 Invited Review Paper及中国科学院院士郝跃教授的综述性文章作为高压 InAlN/GaN HEMT的代表性工作所引用。参加国际重要学术会议15次,邀请报告1次,口头报告4次。申请中国发明专利5项。被IEEE-TED和IEEE-EDL评为2013及2014年度金牌审稿人(Golden Reviewers)。
 
 
教育背景
      2008.08-2012.08  香港科技大学,电子与计算机工程专业,博士学位
      2004.08-2007.04  西安bob体育最新版下载地址,电子工程专业,硕士学位
      2000.09-2004.06  西安bob体育最新版下载地址,电磁场与微波专业,学士学位
 
工作经历
      2017.08-至今        bob体育最新版下载地址, 特聘研究员(bob体育最新版下载地址“百人计划”)
      2015.07-2017.07     bob体育最新版下载地址, 副教授
      2012.08-2015.06     bob体育最新版下载地址, 讲师
      2007.04-2008.07     摩比天线技术(深圳)有限公司,主任工程师/项目经理
 
 
代表性学术成果
      ★ 在被誉为“器件奥林匹克”的顶尖会议IEDM上发表论文2篇
      ★ 2013年在功率半导体顶级会议ISPSD实现GaN领域中国大陆发表论文0的突破
      ★ 2015年在功率半导体顶级会议ISPSD做大会口头报告(首位中国大陆学者在GaN领域做口头报告)
      ★ 2013-2017连续5年在ISPSD发表论文,投稿命中率100%。目前是在顶级会议ISPSD以第一作者及通讯作者发表
          GaN相关研究论文最多的中国学者(第一作者3篇,通讯作者2篇)
      ★ 三项研究成果在顶级期刊 IEEE EDL所发表论文被国际知名半导体行业杂志《Semiconductor Today》和
         《Compound Semiconductor》进行整版面专题报道
 
科研项目
       国家自然科学基金青年项目-"新型InAlN/GaN异质结功率器件新结构与模型"(NSFC61306102)    主持
       国家自然科学基金面上项目-"Si基GaN增强型功率开关器件阈值电压调控机理与新结构"(NSFC61674024)   主持
       国防重点实验室开放基金-"InAlN/GaN MISFET界面电荷行为和相关技术研究"    主持   (已结题)
       中央高校基本科研项目-"Schottky-2DEG隧穿InAlN/GaN功率器件新结构与模型"      主持   (已结题)
       国家科技重大专项-"硅基GaN功能集成与硅工艺融合技术研究"      主研    
 
学术兼职
      2013-至今     IEEE 会员
      2012-至今     国际权威期刊 IEEE Electron Dev. Lett., IEEE Trans. Electron Dev., Applied Physics Lett.特邀审稿人
      2013-至今     SCI期刊 Microelectronics Reliability, Solid-State Electronics, Chinese Physics Lett., Chinese                                              Physics-B 审稿人
科学研究

期刊论文

      52. Wanjun Chen, Hong Tao, Lunfei Lou, Chao Liu, Wu Cheng, Xuefeng Tang, Hongquan Liu, Qi Zhou,Xiaochuan Deng, Zhaoji Li, Bo Zhang, Member, IEEE, "Low Loss Insulated Gate Bipolar Transistor with Electron Injection (EI-IGBT)," IEEE Journal of the Electron Devices Society Page(s):275 - 282 / DOI:10.1109/JEDS.2017.2701791.

      51. Yuanyuan Shi, Qi Zhou *, Anbang Zhang, Liyang Zhu, Yu Shi, Wanjun Chen, Zhaoji Li  and Bo Zhang, "Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3GaNMOS Device," Nanoscale Research Letters (2017) 12:342.

      50. Fangzhou Wang, Wanjun Chen *, Zeheng Wang, Ruize Sun, Jin Wei, Xuan Li, Yijun Shi, Xiaosheng Jin,Xiaorui Xu, Nan Chen, Qi Zhou, Bo Zhang, "Simulation design of uniform low turn-on voltage and highreverse blocking AlGaNGaN power field effect rectifier with trench heterojunction anode," Superlattices and Microstructures 105 (2017) 132-138.

      49. Xiaorui Xu, Wanjun Chen *, Chao Liu, Nan Chen, Hong Tao, Yijun Shi, Yinchang Ma, Qi Zhou, and Bo Zhang, "Gate field plate IGBT with trench accumulation layer for extreme injection enhancement," Superlattices and Microstructures 104 (2017) 54-62.

      48. Qi Zhou *, Yi Yang, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang, "Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode," IEEE Trans. on Industrial Electronics, in press (Impact factor: 6.38)

      47. Q. Zhou *, Z. H. Wang, X. Y. Zhou, A. B. Zhang, Y. Y. Shi, L. Liu, Y. G. Wang, Y. L. Fang, Y. J. Lv, Z. H. Feng,and B. Zhang, "Physics of Dynamic Threshold Voltage and Steep Subthreshold Swing in Al2O3/InAlN/GaNMOSHEMTs," Semicond. Sci. Technol.,  vol. 31, pp. 035005, Jan. 2016.

      46. Qi Zhou *, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, and Bo Zhang *, "7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved byInterface Charge Engineering,"  IEEE Electron Device Letters vol. 37, no.2, pp.165 - 168, Feb. 2016.

被半导体行业国际知名杂志 《Semiconductor Today》作为GaN功率器件重要研究进展进行专题报道。

报道链接:http://www.semiconductor-today.com/news_items/2016/jan/uest_190116.shtml

     45. Yuanyuan Shi, Qi Zhou, Yang Jin, Bowen Chen, Wanjun Chen, Wei Huang and Bo Zhang," Impact of interface traps on switching behavior of Normally-OFF AlGaN/GaN MOS-HEMTs," Physica Solidi Status-C  1–4 (2016) / DOI 10.1002/pssc.201510189

     44.Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao, Xinyu Liu, Jinhan Zhang, Qi Zhou, Wanjun Chen, Bo Zhang, and Lifang Jia ." Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs"[J]. Journal of  acuum Science & Technology B, 2016, 34(4): 041202.

     43. Wanjun Chen, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Qi Zhou, Zhaoji Li and Bo Zhang, "High Peak Current MOS Gate-Triggered Thyristor with Fast Turn-on Characteristics for Solid-State Closing SwitchApplications," IEEE Electron Device Letters  vol. 37, no.2, pp.205-208, Feb. 2016.

     42. Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li,Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang,  and  Xinyu Liu, "Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High- Temperature Gate Recess,"IEEE Trans. on Electron Devices  vol. 63, no.2, pp.614-619, Feb. 2016.

     41. Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Yingkui Zheng, Yankui Li, Chao Zhao, Xinyu  Liu, Qi Zhou, Wanjun Chen and Bo Zhang, "Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to  AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing," Applied Physics Lett., vol. 107, no. 26, pp.262109, 2015

     40. Qi Zhou *, Li Liu, Xingye Zhou, Anbang Zhang, Yuanyuan Shi, Zeheng Wang, Yuan Gang Wang, Yulong Fang, Yuanjie Lv, Zhihong Feng and Bo Zhang, "Lateral AlGaN/GaN diode with MIS-gated hybrid anode for  high-sensitivity zero-bias microwave detection," IET Electronics Lett., vol. 51, no. 23, pp: 1889–1891, Nov. 2015

     39. Qi Zhou *, Yang Jin, Yuanyuan Shi, Jinyu Mou, Bao Xu, Bowen Chen, and Bo Zhang, "High Reverse  Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode with MIS-Gated Hybrid Diode," IEEE Electron Device Lett., vol. 36, no. 7, Jul. 2015.

    被国际半导体行业著名杂志《Semiconductor Today》作为GaN功率半导体技术重要研究进展进行专题报道。

    报道链接:http://www.semiconductor-today.com/news_items/2015/may/uest_270515.shtml

     38. Qi Zhou *, Bowen Chen, Yang Jin, Sen Huang, Ke Wei, Xinyu Liu, Xu Bao, Jinyu Mou, and Bo Zhang, "High- Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs with 626MW/cm2 Figure of Merit,"IEEE Trans. on Electron Devices, vol. 62, no. 3, pp: 776-781, Mar. 2015.

     37. Qi Zhou *, Shu Yang, Wanjun Chen, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High voltage  InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications," Solid-State Electronics, vol.91, pp: 19-23, 2014.

36. Qi Zhou *,, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement," IEEE Trans. on Electron Devices, vol. 60, no. 3, pp: 1075-1081, Mar. 2013.

 

35. Qi Zhou *,, W. Chen, C. Zhou, B. Zhang and K.J. Chen, "High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection," IET Electronics Lett., vol. 49, no. 22, pp: 1391-1393, Oct. 2013.

34. Qi Zhou *,, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High  Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications,"Electrochemical Society Transactions , vol. 54, no. 4, pp: 351-363, Oct. 2013.

33. Qi Zhou *,, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky  Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High  Breakdown Voltage and Low On-Resistance," Jpn. J. Appl. Phys. vol. 51, 04DF02, Apr. 2012.

32. Qi Zhou *,, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/AlN/GaN MISHEMT with Enhanced Breakdown Voltage," IEEE Electron Device Lett., vol. 33, no. 1,  pp:19-21, Jan. 2012.

31. Shu Yang, Sen Huang, Hongwei Chen, Chunhua Zhou, Qi Zhou, Michael Schnee, Qing-Tai Zhao, Jurgen  Schubert, and Kevin J. Chen, "AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric," IEEE Electron  Device Lett., vol. 33, no. 7, pp: 979-981, Jul. 2012.

30. Hongwei Chen, Li Yuan, Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN power  tunnel-junction FETs, " Phys. Status Solidi-C, vol. 9, no. 3-4, pp: 871-874, Mar. 2012.

29.  Li Yuan, Hongwei Chen, Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Gate-Induced Schottky Barrier  Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor"IEEE Electron Device  Lett., vol. 32, no. 9, pp: 1221-1223, Sep. 2011.

28. Qi Zhou *, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "Wide-Dynamic-Range Zero-Bias   Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode," IEEE Microwave and Wireless Components Lett., vol. 20, no. 5, pp: 277-279, May. 2010.

27. King-Yuen Wong, Wanjun Chen, Qi Zhou , and Kevin J. Chen, "Zero-Bias Mixer Based on AlGaN/GaN  Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications,"IEEE Trans. on  Electron Devices, vol. 56, no. 12, pp: 2888-2894, Dec. 2009.

26. S. J. Li, Qi Zhou, Y. J. Xie, and Z. Y. Lei, "THEORETICAL AND EXPERIMENTAL INVESTIGATION ON PCB  HELIX ANTENNA," J. of Electromagnetic Waves and Applications, vol. 21, no. 7, pp. 877-887, Jul. 2007.

25. Qi Zhou *, Y. J. Xie, and Z. Chen, "Prediction of Equipment-to-Equipment Coupling Through Antennas  Mounted on and Aircraft," J. of Electromagnetic Waves and Applications, vol. 21, no. 5, pp: 653-663, 2007.

国际顶级学术会议 (IEDM、ISPSD)

24. Chao Liu, Wanjun Chen*, Hong Tao, Yijun Shi, Xuefeng Tang, Wuhao Gao, Qi Zhou, Zhaoji Li and  Bo Zhang, "Transient Overvoltage Induced Failure of MOScontrolled Thyristor under Ultra-high di/dt Condition," Int. Symp. on Power Semicond.Devices & IC's (ISPSD), Sapporo, Japan, May 28-Jun 1, 2017.  

23. Yijun Shi, Wanjun Chen*, Chao Liu, Guanhao Hu, Jie Liu, Xingtao Cui, Hong Tao , Jinhan Zhang, Yuanyuan Shi, Anbang Zhang, Zhaoji Li, Qi Zhou, Bo Zhang, "A High-Performance GaN E-mode Reverse Blocking MISHEMT with MIS Field Effect Drain for Bidirectional Switch," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Sapporo, Japan, May 28-Jun 1, 2017.  

22. Anbang Zhang, Qi Zhou *, Wanjun Chen, Yuanyuan Shi, Zhaoji Li, and Bo Zhang, "An AlGaN/GaN Current Regulating Diode," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Sapporo, Japan, May 28-Jun  1, 2017.

     21. Qi Zhou *,Anbang Zhang, Ruopu Zhu, Yuanyuan Shi, Zeheng Wang, Li Liu, Bowen Chen, Yang Jin, Wanjun  Chen, and Bo Zhang, "Threshold Voltage Modulation by Interface Charge Engineering for High   Performance Normally-off GaN MOSFETs with High Faulty Turn-on Immunity," Int. Symp. on Power  Semicond. Devices & IC's (ISPSD), Prague, Czech Republic, June 12–16, 2016.

20. Wanjun Chen*, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Hongquan Liu, Qi Zhou, Zhaoji Li, and Bo  Zhang, "Experimentally Demonstration a Cathode Short MOS-Controlled Thyristor (CS-MCT) for Single or Repetitive Pulse Applications,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Prague, Czech Republic, June 12–16, 2016.

     19. Qi Zhou *, Yang Jin, Xu Bao, Jingyu Mou, Bowen Chen, Yijun Shi, Zhaoyang Liu, Jian Li, Wanjun Chen, and Bo Zhang, "Over 1.1 kV Breakdown Voltage, Low Turn-on Voltage GaN-on-Si Power Diode with MIS-Gated  Hybrid Anode," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hong Kong, China, May, 2015.  GaN领域迄今中国大陆在该顶级会议唯一大会口头报告

     18. Qi Zhou *, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Breakdown Voltage InAlN/GaN HEMTs Achieved by Schottky-Source Technology," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Kanazawa, Japan., pp. 195-198, May. 2013.GaN领域中国大陆在该顶级会议第一篇论文

     17. Jinhan Zhang, Sen Huang, Qi Zhou *, Xinhua Wang, Ke Wei, Guoguo Liu, Yingkui Zheng, Xiaojuan Chen, Xinyu Liu, Zhongjie Yu, Wanjun Chen, and Bo Zhang, "ON-State Breakdown Mechanism of GaN Power  HEMTs," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hawaii, US., pp. 362-365, Jun. 2014.

     16. Li Yuan, Hongwei Chen, Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "A Novel Normally-off GaN Power  Tunnel Junction FET," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), San Diego, US., pp. 276-  279, May. 2011.

     15. Qi Zhou *, Sen Huang, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Schottky  Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio," Int. Electon Device Meeting (IEDM), Washington, US., pp. 777-780, Dec. 2011.

     14. Kevin J. Chen, L. Yuan, M. J. Wang, H. Chen, S. Huang, Qi Zhou, C. Zhou, B. K. Li, and J. N. Wang, "Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology," Int. Electon Device Meeting (IEDM), Washington, US., pp. 467-470, Dec. 2011.(Invited paper

 

其他国际学术会议

    13. Kai Hu, Qi Zhou†,"Lateral AlGaN/GaN power diode with MIS-Gated Hybrid Anode for ultra-low turn-on voltage and high breakdown voltage," Accepted.

    12. Ruopu Zhu, Qi Zhou†, A. Zhang, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, Wanjun Chen, and Bo Zhang,"High Performance Normally-off Al2O3/GaN MOSFETs with Record High Threshold Voltage by Interface Charge Engineering," IEEE  Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China,Oct. 2016.

    11. Yi Yang, Qi Zhou†, Yuanyuan Shi, Zeheng Wang, Li Liu, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang,"0.3 VT/1.1 kV AlGaN/GaN Lateral Power Diode with MIS-Gated Hybrid Anode on Silicon Substrate,"IEEE  Int.Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China,Oct. 2016

    10. Yuanyuan Shi, Qi Zhou *, Yang Jin, Bowen Chen, Wanjun Chen, and Bo Zhang, "Impact of interface states on switching behavior of Normally-OFF AlGaN/GaN MIS-HEMTs,"11th Intl. Conference on Nitride Semiconductors (ICNS), Aug. 2015

     9. Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu, Yijun Shi, Qi Zhou, Wanjun Chen, and Bo Zhang, "Microstructure and physical mechanism of Au-free ohmic contacts to AlGaN/GaN heterostructures annealed at 600 C," 11th Intl. Conference on Nitride Semiconductors (ICNS), Aug. 2015

     8. Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu, Qi Zhou, Wanjun Chen, Bo Zhang,  "Study of interface traps and fixed charges between GaN(cap)/AlGaN/AlN/GaN heterostructure and SiNx gate dielectric grown by Low Pressure Chemical Vapor Deposition," 11th Intl. Conference on Nitride  Semiconductors (ICNS), Aug. 2015

     7. Qi Zhou *, Ling Wang, Xu Bao, Jinyu Mou, Yuanyuan Shi, Zhaoyang Liu, Wanjun Chen, and Bo Zhang, "High Performance AlGaN/GaN Power Diode with Edge-Terminated Hybrid Anode," IEEE 12th Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Guilin, China, Oct. 2014.

     6. Qi Zhou *, W. J. Chen, S. H. Liu, B. Zhang, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN  Heterojunction: Prospects for Robust GaN Power Devices," 224th Electronchemical Society Meeting, SanFrancisco, US., Oct. 2013. (Invited paper)

     5. Hongwei Chen, Li Yuan, Qi Zhou , Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN Power Tunnel-Junction FETs," 9th Int. Conf. on Nitride Semiconductors (ICNS), Glasgow, Scotland, Jul. 2011.

     4. Qi Zhou *, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN Schottky  Source/Drain MIS-HEMT with High Breakdown Voltage," Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 624-625, Sep. 2011.

     3. Qi Zhou *, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT," Device Research Conference (DRC), Santa Barbara, US., pp. 71-72, Jun. 2011.

     2. Qi Zhou *, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "High-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN-Based Lateral Field-Effect Diode," IEEE Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), HongKong, China, pp. 1-4, 2009.

     1. Qi Zhou *, King Yue Wong, Wanjun Chen, and Kevin J. Chen, "Microwave Detector Using AlGaN/GaNHEMT-Compatible Lateral-Field Effect Rectifier (L-FER)," Topical Workshop on Heterostructure Microelectronics (TWHM), Nagano, Japan, Aug. 2009.

 

主讲课程
研究方向
研究内容1-氮化镓(GaN)功率器件新型结构与物理模型
针对未来电力电子在高效、高速、小型化等方面的应用需求,开发低功耗、高耐压、大功率密度的GaN功率器件新结构,同时开展器件物理模型研究。
研究内容2-GaN器件先进制备技术
开发新型GaN功率器件阈值电压调制技术、GaN器件CMOS兼容制备技术、GaN器件先进钝化技术。
研究内容3-新型GaN异质结器件及其制备技术
开展AlGa(In)N/GaN,AlN/GaN等新型GaN异质结器件新结构及其制备技术的研究。
研究内容4-GaN smart power IC
高速、高效、小型化GaN power conversion module、 GaN power management IC

研究条件
本人及所在功率集成技术实验室(PITEL)在宽禁带功率半导体研究领域已与北京大学、复旦大学、西安bob体育最新版下载地址、中科院微电子所、中电集团13所、苏州纳米所、Hong Kong University of Science and Technology(HKUST)、University of Toronto等国内、外研究机构建立了长期、紧密的合作关系。具备从GaN器件设计、器件制备、器件动/静态特性表征、器件可靠性及失效模式分析等在内的一整套软/硬件实验条件。