bob体育官网,bob体育最新版下载地址

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bob体育官网-bob体育最新版下载地址

邓小川

邮箱:xcdeng@uestc.edu.cn
电话:028-83201693
系别:微电子与固体电子系
职称:教授
教师个人主页:http://faculty.uestc.edu.cn/dengxiaochuan
教师简介
教育背景
         2004.09-2008.06  bob体育最新版下载地址,微电子学专业,博士学位
                 
工作履历
         2008.06-2017.12  bob体育最新版下载地址,微电子与固体电子学院
         2018.01-               bob体育最新版下载地址,bob体育官网

学术兼职
        中国仿真学会集成微系统建模与仿真专委会 委员
科学研究

代表性论文      

1. Xiaochuan Deng, Lijun Li, Jia Wu, Chengzhan Li, Wanjun Chen, Juntao Li, Zhaoji Li; Bo Zhang, A Multiple-Ring-Modulated JTE Technique for SiC Power Device With Improved JTE-Dose Window, IEEE Transactions on Electron Devices, 2017, 64(12): 5042-5047.

2. Xuan Li, Xing Tong, Alex Q. Huang, Hong Tao, Kun Zhou, Yifan Jiang, Junning Jiang, Xiaochuan Deng, Xu She, Bo Zhang, Yourun Zhang, and Qi Tian, SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode, IEEE Transactions on Electron Devices, 2018, 65(1): 347-351.

3. Xiaochuan Deng, Xixi Chen, Dongdong Liu, Kunyuan Liang, Zhi Gan, Zhaoji Li, and Bo Zhang, An Accumulation Mode RF Laterally Double Diffused MOSFET With Improved Performance, IEEE Electron Device Letters, 2016, 37(10): 1321-1323.

4. Xiaochuan Deng, Yuanxu Guo, Tianxiang Dai, Chengzhan Li, Ximing Chen, Wanjun Chen, Yourun Zhang and Bo Zhang, A robust and area-efficient guard ring edge termination technique for SiC power MOSFETs, Materials Science in Semiconductor Processing, 68C:108-113, 2017.

5. Xuan Li, Junning Jiang, Alex Q. Huang, Suxuan Guo, Xiaochuan Deng, Bo Zhang and Xu She, A SiC Power MOSFET Loss Model Suitable for High Frequency Applications, IEEE Transactions on Industrial Electronics, 2017,64(10):8268-8276.

6. Xiaochuan Deng, Xixi Chen, Chengzhan Li, Huajun Shen, and Jinping Zhang, Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers, Chinese Physics B, 2016, 25(8): 087201.

7. Tianxiang Dai, Chun Wa Chan, Xiaochuan Deng, Huaping Jiang, Peter M. Gammon, Mike R. Jennings and Phil A. Mawby4H-SiC trench MOSFET with integrated fast recovery MPS diode, Electronics Letter, 2018, 54(3): 167–169.

8. Xiaochuan Deng, Han Xiao, Jia Wu, Huajun Shen, Chengzhan Li, Yachao Tang, Yourun Zhang, Bo Zhang, Design, fabrication and characterization of mesa combined with JTE termination for high-voltage SiC PiN diodes, Superlattices and Microstructures, 2015, 88: 167-173.

9. Xiaochuan Deng,  He Sun, Chengyuan Rao, Bo Zhang, High-power SiC MESFETs using dual p-buffer layer for S-band power amplifiers, Chinese Physics B, 22(1):017302, 2013

10. Xiaochuan Deng, Chengyuan Rao, Jin Wei, Huaping Jiang, Miaomiao Chen, Xiangdong Wang and Bo Zhang, High voltage SiC JBS diodes with multiple zone junction termination extension using single etching step. Materials Science Forum, 778-780:808-811, 2014

11. Xiaochuan Deng, Liang Li, Bo Zhang, Jianghui Mo, Yong Wang, Yi Wang and Zhaoji Li, High-power density SiC MESFETs with multi-recess gate. Electronics Letter, 47(8): 517-518, 2011

12. Xiaochuan Deng, Bo Zhang, Yourun Zhang, Yi Wang, and Zhaoji Li, Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer. Chinese Physics B, 20(1): 017304, 2011

13. XiangDong Wang, Xiaochuan Deng, Yong-Wei Wang, Yong Wang, Yi Wen and Bo Zhang, Experimental and numerical analysis of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring. Chinese Physics B. 23(5):057203, 2014

14. Xiaochuan Deng, Bo Zhang, Zhaoji Li, Two-dimensional analysis of the gate–source distance scaling effects in 4H-SiC MESFETs. Semiconductor Science and Technology, 24(1):015011, 2009

15. Xiaochuan Deng, Zhen Feng, Bo Zhang, Zhaoji Li, Liang Li and Hongshu Pan. Experimental and numerical analysis of the multi-recessed gate structure for microwave Silicon Carbide power MESFETs. Chinese Physics B, 18(7): 3018-3023, 2009

16. Xiaochuan Deng, Bo Zhang, Zhaoji Li, Zhuangliang Chen. Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs. Microelectronic Engineering, 85(2):295-299, 2008

17. Xiaochuan Deng, Bo Zhang, Zhaoji Li. Electro-thermal analytical model and simulation of the self-heating effects in multi-finger 4H-SiC power MESFETs. Semiconductor Science and Technology, 22(12):1339-1343, 2007

18. Xiaochuan Deng, Bo Zhang, Zhaoji Li, Zhuangliang Chen. Numerical analysis on the 4H-SiC MESFETs with a source field plate. Semiconductor Science and Technology, 22(7):701-704, 2007

19. Xiaochuan Deng, Bo Zhang, Zhaoji Li, and Yourun Zhang. Improved dual-channel 4H-SiC MESFETs with high doped n-type surface layer and step-gate structure. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 30(7): 074001-1-074001-5, 2009


主讲课程
 研究方向
1、宽禁带半导体碳化硅功率半导体技术
高压大电流宽禁带半导体碳化硅(SiC)功率器件理论、模型和新结构研究,包括:SiC IGBT、SiC MOSFET、SiC功率整流器以及功率模块等。
2、大功率射频半导体器件技术
超大功率Si基RF LDMOS器件和SiC基微波固态功率器件设计、模型与新结构研究。
 
研究条件
     完整的器件与集成电路设计平台(Cadence,Silvaco,Senturus,Taurus Medici,Hspice,Sabe等)
     0.45mm微细加工平台