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bob体育官网-bob体育最新版下载地址

陈万军

邮箱:wjchen@uestc.edu.cn
电话:028-83201693
系别:微电子与固体电子系
职称:教授
教师个人主页:http://faculty.uestc.edu.cn/chenwanjun
教师简介
陈万军,男,1978年9月出生,重庆人,教授、博士生导师。现任bob体育官网副院长。四川省杰出青年资助计划入选者,四川省学术和技术带头人后备人选,IEEE高级会员(Senior Member),中国电子学会高级会员,中国电子学会青年科学家会员,四川省电子学会半导体与集成技术专委会秘书长。

2007年获bob体育最新版下载地址博士学位,2007-2010年在香港科技大学进行博士后研究,2010年起任教于bob体育最新版下载地址微电子与固体电子学院,2013年晋升为博士生导师,2014破格晋升为教授。长期致力于新型功率半导体器件与集成技术领域的科学研究和人才培养工作。主持承担国家科技重大专项、国家自然科学基金、预研重点、瓶颈攻关等国家级/省部级和横向课题30余项;在IEEE Elec. Devi. Lett.、IEEE Trans. on Elec. Devi.、Appl. Phys. Lett.等国际权威期刊和IEDM、ISPSD等著名国际会议发表论文100余篇,其中SCI检索60余篇,EI检索80余篇,引用次数超过1000次;获授权美国专利、中国发明专利10余项。获四川电子科学技术奖一等奖(排名第一)、四川省教学成果一等奖、中国电子学会先进工作者荣誉称号、CASA第三代半导体“卓越创新青年”称号等。



科学研究

一:研究领域简介

主要从事于硅基功率半导体技术、宽禁带氮化镓(GaN)功率器件与集成技术等领域研究,与杭州士兰微、中航微电子、中科院、中国工程物理研究院、中电集团、北京大学、复旦大学、西安bob体育最新版下载地址、Hong Kong University of Science and Technology(HKUST)、University of Toronto等国内、外研究机构建立了长期、紧密的合作关系。所培养的研究生多就职于国内外知名企业和研究机构,或在国内外知名高校进一步研修。

欢迎有志于硅基功率半导体技术、宽禁带GaN器件与集成技术领域的学生报考硕士/博士研究生。


二:研究方向

 研究内容1:功率半导体器件

(1)IGBT、VDMOS、功率整流器等硅基功率半导体器件

(2)高脉冲功率半导体器件

 研究内容2:宽禁带功率半导体

(1)GaN基功率半导体器件

(2)高频GaN基电子器件

 研究内容3:功率集成电路

(1)基于GaN功率器件的混合功率集成电路

(2)全集成GaN基功率集成电路


三:部分科研项目:

1、国家重大专项:硅基GaN功能集成与硅工艺融合技术研究,2013-2015,1136万元,主持(1)

2、国家重大专项:IGBT芯片设计,2011-2014,830万元,主持(1)

3、部级重点项目:高压高动态特性XXX,2011-2015,1000万元,主持(1)

4、国家自然科学基金:压控半导体高功率开关器件瞬态输运机理与关键技术研究,2014-2016, 90万元,主持(1)

5、国家自然科学基金:GaN异质结器件场控能带模型(FCE)与新结构,2013-2016,88万元,主持(1)

6、国家自然科学基金:高性能AlGaN/GaN复合阳极场控功率整流器新结构及模型,2011-2013,24万元,主持(1)

近年来发表的重要学术论文(统计截止2014年):

Chen Wan-Jun, Sun Rui-Zea, Peng Chao-Feia, Zhang Bo, “High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications,” Chin. Phys. B, Vol. 23,No. 7 (2014) 077307

Wanjun Chen, Ruize Sun, Kun Xiao,Hongzhi Zhu, Chaofei Peng, Zhaoyang, Jianxin Ruan, Bo Zhang, Zhaoji Li, “A behavioral model for MCT surge current analysis in pulse discharge,” Solid-State Electronics, Vol. 99, pp. 31-37, Sep 2014

Qi Zhou, Shu Yang, Wanjun Chen,et.al., “High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications,” Solid-State Electronics, No. 91,January, pp. 19-23, 2014

Wanjun Chen, Jing Zhang, Bo Zhang, et.al.“Analysis and reduction of the gate forward leakage current in AlGaN/GaN HEMTs employing energy-band modulation technology,” Solid-State Electronics, Vol. 80, Feb, pp. 76-80, 2013

Wanjun Chen, Jing Zhang,Z. Wang, et.al.,“Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaNlateral field-effect rectifier,” Semiconductor Science and Technology, Vol. 28 No. 1,January, pp. 015021(1-4), 2013

Qi Zhou,Wanjun Chen,Shenghou Liu, et.al.,“Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement,” IEEE Trans. on Electron Devices,Vol. 60 No. 3, March, pp. 1075-1081, 2013

Qi Zhou, Wanjun Chen, et.al.,“High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection,” IET Electronics Letters, Vol. 49 No. 22, Oct, pp. 1391-1393, 2013

Jia Si, Jin Wei,Wanjun Chen, et.al.,“Electric Field Distribution Around Drain-Side GateEdge in AlGaN/GaN HEMTs: Analytical Approach,” IEEE Trans. on Electron Devices, Vol. 60 No. 10, Oct, pp. 3223-3229, 2013

Qi Zhou,Wanjun Chen,Shenghou Liu, et.al.,“High Breakdown Voltage InAlN/AlN/GaNHEMTsAchieved by Schottky-Source Technology,” INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), Kanazawa, pp. 195-198, May 2013

Zhigang Wang, Bo Zhang,Wanjun Chen, et.al.,“A Closed-Form Charge Control Model for the Threshold Voltage of Depletion- and Enhancement-Mode AlGaN/GaN Devices,” IEEE Trans. on Electron Devices, Vol. 60 No. 5,May, pp. 1607-1612, 2013

Wanjun Chen, Jing Zhang, Bo Zhang, et.al.,“Fluorine-Plasma Surface Treatment for Gate Forward Leakage Reduction in AlGaN/GaN HEMTs,”Journal of Semiconductors, Vol. 34 No. 2,Feb, pp. 41-44, 2013

Yue Qi, Zhigang Wang, Wanjun Chen, et.al.,“A high performance carrier stored trench bipolar transistor with a field-modified P-base region,” Journal of Semiconductors, Vol. 34 No. 4,April, pp. 58-63, 2013

Zhigang Wang, Wanjun Chen, Jing Zhang, et.al.,“Monolithic integration of an AlGaN/GaN metal insulator field-effect transistor with an ultra-low voltage-drop diode for selfprotection,” Chinese Physics B, Vol. 21 No. 8 , Aug, pp.087305(1-6) , 2012

Zhigang Wang,Wanjun Chen,Bo Zhang, et.al., “A Novel Controllable Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage,” Chinese Physics Letters, Vol. 49 No. 23 , Oct, pp.107202(1-5) , 2012

Huaping Jiang, Bo Zhang,Wanjun Chen, et.al., “A Snapback Suppressed Reverse-Conducting IGBTWith a Floating p-Region in Trench Collector,” IEEE Electron Devices Letters, Vol. 33 No. 3, March, pp.417-419, 2012

H. Jiang,B. Zhang,Wanjun Chen, et.al., “A Simple Method to Design the Single-Mask Multi-Zone Junction Termination Extension for High-Voltage IGBT,” INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), Bruges, pp. 173-176, June 2012

Huaping Jiang, Jin Wei; Bo Zhang,Wanjun Chen, et.al., “Band-to-Band Tunneling Injection Insulated-GateBipolar Transistor with a Soft Reverse-RecoveryBuilt-In Diode,” IEEE Electron Devices Letters, Vol. 33 No. 12, Dec, pp.1684-1686, 2012

Huaping Jiang, Bo Zhang,Wanjun Chen, et.al., “Low turnoff loss reverse-conducting IGBT with double n-p-n electron extraction paths,” IET Electronics Letters, Vol. 48 No. 8, April, pp.457-458, 2012

Huangping Jiang,Bo Zhang,Chuang Liu,Wanjun Chen, et.al.,“Experimental study of the anode injection efficiency reduction of 3.3-kV-classNPT-IGBTs due to backside processes,” Journal of Semiconductors, Vol.33 No. 2, pp.43-46, April2012

Huangping Jiang,  Wanjun Chen,ChuangLiu, et.al., “Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs,”Journal of Semiconductors, Vol. 32, No. 12, Dec, pp.74-79, 2011

Wanjun Chen,Chunhua Zhou, Chen K. J, et.al., “High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance,” IET Electronics Letters , Vol. 46 No. 24, November, pp.1626-1627, 2010

Chunhua Zhou, Wanjun Chen, Piner, E.L, et.al.,“AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough BreakdownImmunity and Low On-Resistance,” IEEE Electron Devices Letters,Vol. 31 No. 1, Jan, pp.5-7, 2010

Chunhua Zhou, Wanjun Chen, Piner, E.L, et.al.,“Schottky-Ohmic Drain AlGaN/GaN Normally-Off HEMT with Reverse Drain Blocking Capability,” IEEE Electron Devices Letters, vol. 31, No.7,July, pp. 668-670, 2010

King-Yuen Wong, Wanjun Chen, Chen, K.J, “Characterization and analysis of the temperature-dependent on-resistance in AlGaN/GaN lateral Field-Effect Rectifiers,” IEEE Transaction on Electron Devices,Vol. 57 No. 8, Aug, pp.1924-1929, 2010

C. Zhou,Wanjun Chen, et.al.,“AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability,” IET Electronics Letters , Vol. 46 No. 6,March , pp.445-447, 2010

Qi Zhou, King-Yuen Wong,Wanjun Chen, et.al.,“Wide-Dynamic-Range Zero-Bias Microwave Detector Using Al/GaNHeterojuncton Field-Effect Diode,” Microwave  and Wireless Components Letters,Vol. 20 No. 5,May,  pp.277-279, 2010

Wanjun Chen, King-Yuen Wong, and Kevin J. Chen, “Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally-off HEMT” , IEEE Electron Devices Letters, vol. 30, No.5 pp. 430-432, 2009

Wanjun Chen, King-Yuen Wong, and Kevin J. Chen, “HEMT-compatible lateral field-effect rectifier using CF4 plasma treatment”, Phys. Status Solidic (c), pp. 1-4, Feb 2009

Chunhua Zhou, Wanjun. Chen, E. L. Piner, and K. J. Chen, “AlGaN/GaN Dual-Channel Lateral Field-EffectRectifier With Punchthrough Breakdown Immunity and Low On-Resistance”, IEEE Electron Device Letters,Vol. 31, No. 1, Jan. 2010

Chunhua Zhou,Wanjun Chen,Piner, E.L,“Self-Protected GaN Power Devices with Rrverse,” 2010,INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD),Hiroshima, pp. 343-346 , June 2010

Wenlian Wang, Bo Zhang, Zhaoji Li, and Wanjun Chen, “High-Voltage SOI SJ-LDMOS With a Nondepletion Compensation Layer”, IEEE Electron Device Letters, vol. 30, No. 1, pp. 68-71, Jan. 2009

W.L. Wang, B. Zhang, W.J. Chen, and Z.J. Li, “High-Voltage SOI SJ-LDMOS with Dynamic Back-gate Voltage,” IET Electronics Letters , Vol. 45 No. 4, pp.233-235, Feb 2009

W.L. Wang, B. Zhang, W.J. Chen, and Z.J. Li, “High-Voltage SOI SJ-LDMOS with Dynamic buffer,” IET Electronics Letters , Vol. 45 No. 9, pp.478-480, April 2009

Bo Zhang, Wenlian Wang, Wanjun Chen, Zehong Li, Zhaoji Li, High Voltage LDMOS with Charge-Balanced Surface Low On-resistance Path Layer, IEEE Electron Devices LettersVol. 30 No. 8, pp.849-851, Aug 2009

King-Yuen Wong, Wanjun Chan, Qi Zhou and K. J. Chen, “Zero-Bias Mixer Based on AlGaN/GaN HEMT-Compatible Lateral Field-Effect Diodes for High Temperature Wireless Sensor and RFID Applications,” IEEE Trans. on Electron Devices, Vol. 56 No.12, pp.2888-2894, Dec 2009

King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, “Integrated Voltage Reference and Comparator Circuits for GaN Smart Power Chip Technology”, In Proceeding of ISPSD 2009, Barcelona, pp. 57-60, June 2009

W. Chen, K. Y. Wong, W. Huang, and K. J. Chen, “High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors”, Appl. Phys. Lett., vol. 92, pp. 253-501, 2008

Wanjun Chen, Bo Zhang, Zhaoji Li, “Realizing high voltage SJ-LDMOS with non-uniform N-buried layer”, Solid-State Electronics, vol. 52, pp. 675-678, 2008

Wanjun Chen, King-Yuen Wong, and Kevin J. Chen, “Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters”, International Electron Devices Meeting(IEDM 2008), San Francisco, pp.141-144, Dec. 15-17, 2008

Wanjun Chen, Bo Zhang, Zhaoji Li, Zhe Liu, “A Novel High Voltage LDMOS for HVIC with the Multiple Step Shaped Equipotential Rings”, Solid-State Electronics, Vol. 51 No. 3, pp.394-397, 2007

Wanjun Chen, Bo Zhang, Zhaoji Li, “Optimization of super-junction SOI-LDMOS with step doping surface-implanted layer”, Semiconductor Science and Technology, Vol. 22 No. 5, pp. 464

Chen, WJ; Zhang, B; Li, ZJ, “Optimization of the VDMOSFET structure with reduced gate charge,”Semiconductor Science and Technology, Vol. 22 No. 9, pp. 1033-1038,  Sep 2007

Wanjun Chen, Bo Zhang, Zhaoji Li,“Realizing high breakdown voltage SJ-LDMOS on bulk silicon using a partial N-buried layer”,Chinese Journal of Semiconductor, Vol.28, No.3, pp.355, March 2007

Wanjun Chen, Bo Zhang, Zhaoji Li, “A novel bouble RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC”,Microelectronics Journal, Vol. 37, Issue7, July, pp. 574, 2006

W. Chen, B Zhang, Z Li, “Novel SJ-LDMOS with high breakdown voltage and ultra low on-resistance”,IET Electronics Letters , Vol. 42 No. 22, October, 2006

Bo Zhang, Wanjun Chen, Kun Yi, Zhaoji Li, “Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors”, Solid-State Electronics, Vol.50 No. 3, Jun. pp.480-488, 2006

Chen Wanjun, Zhang Bo, Li Zhaoji, Deng Xiaochuan,“Optimum Design of PSJ for High-Voltage Devices”,Chinese Journal of Semiconductor,Vol.27, No.6, June, pp.1089-1093, 2006

Chen Wanjun, Zhang Bo, Li Zhaoji,“On the Blocking Capability of Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection”,Chinese Journal of Semiconductor,Vol.27, No.7, pp. 1274, 2006.7

Wanjun Chen,Bo Zhang,Zhaoji Li, “A Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection,” Chinese Journal of Semiconductors, Vol.27, No.7,  June, pp. 1274-1279, 2006



部分专利:

美国发明专利:Integrated HEMT and Lateral field-effect rectifier combinations, methods and systems,US 8076699 B2,排名2

中国发明专利:一种场致隧穿增强型HEMT器件,CN 102881716 A,排名1

中国发明专利:一种无snapback效应的逆导型绝缘栅双极晶体管,CN 103022089 A,排名1

中国发明专利:一种MOS场控晶闸管,CN 102623492 A,排名1

中国发明专利:一种具有低导通压降的P-i-N二极管,CN 102723369 A,排名1

中国发明专利:一种载流子储存槽栅双极型晶体管,CN 102800691 A,排名1

中国发明专利:一种宽元胞绝缘栅双极型晶体管,CN 103579323 A,排名1

中国发明专利:一种FS-IGBT器件阳极的制造方法,CN 103578959 A,排名1

中国发明专利:一种MOS控制晶闸管的制作方法,201410226744.5,排名1

中国发明专利:一种GaN异质结HEMT器件,CN102945859 A,排名2


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