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bob体育官网-bob体育最新版下载地址

罗谦

邮箱:luorqian@uestc.edu.cn
电话:028-83208233
系别:集成电路与系统系
职称:副教授(副研究员等)
教师个人主页:
教师简介
教育背景
       
2000.09 – 2007.04,bob体育最新版下载地址,微电子学与固体电子学,硕博连读,博士
1994.09 – 1998.06,四川大学,微电子技术,本科
工作履历
       
    2013.06–至今, bob体育最新版下载地址,微电子与固体电子学院,副教授
    2009.10 – 2010.10,香港科技大学,ECE系(Department of Electronic and Computer engineering),博士后
2007.05 – 2013.05,bob体育最新版下载地址,微电子与固体电子学院,讲师
科学研究

研究方向

研究内容1:化合物半导体方向

1. 化合物半导体异质结物理。

2.GaN基高电子迁移率晶体管器件物理及制备工艺。

3. 针对化合物半导体器件的新型耐压终端技术。

研究内容2:Si基小尺寸器件方向

1.  应变Si的制备与表征。

2.新型应变结构及相关器件物理。



近期发表的论文


1. Qian Luo, Di Zhao, Xiangzhan Wang, Qi Yu, Wei Cui, Kaizhou Tan, Stress Modulation Technology for 45nm-gate-CMOS Strained by a Compressive SiN Film, Nanoscience and Nanotechnology Letters (to be published)

2. Qian Luo and Qi Yu, Self-consistent Results for the 2DEG in a Quantized Triangular Well, Nanoscience and Nanotechnology Letters,Vol. 6, P 861-864, 2014

3. Zhao Di, Luo Qian, Wang Xiangzhan, Yu Qi, Cui Wei, Tan Kaizhou, Performance Enhancement of c-CESL-Strained 95nm-gate NMOSFET Using Trench-Based Structure, Journal of semiconductors (to be published)

4. Xiangzhan Wang, Qingping Zeng, Bin Liu, Cheng Gan, Qian Luo, Qi Yu, Yang Liu, Kaizhou Tan, Xianwei Ying, A Stress Concentration MOSFET Structure, IEEE Transactions on Electron Devices, 2014, 61(1), P.207

5. Ziqi Zhao, Ziyu Zhao, Qian Luo, and Jiangfeng Du, High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode, Electronic Letters, 2013, 49(25), P.16380

6. Qian Luo, Bin Liu, Qi Yu, Xiang-zhan Wang, Jing-chun Li, Stress Management for CESL Based Strained PMOSFET Using Trench Structure, IEEE. 2012 11th International Conference on Solid-State and Integrated Circuit Technology Proceedings(ICSICT-2012), Oct. 29-Nov. 1, 2012, Xi’ an, China, P. S25_04

7. Qian Luo and Qi Yu,Electric Field Modulation by Introducing a Hk Dielectric Film of Tens of Nanometers in AlGaN/GaN HEMT,Nanoscience and Nanotechnology Letters, 2012, 4, P.1

8. Qian Luo, JiangFeng Du, XiangZhan Wang, Ning Ning, Yang Liu and Qi Yu, “An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor”, Advanced Materials Research, Optical, Electronic Materials and Applications II, Vol.529, p 33-36 (2012)

9. Xiangzhan Wang, Guixia Qin, Qian Luo,Influence of the STI Sidewall Angle on the Induced Channel Stress in Nanoscaled PMOSFETs,Journal of the Korean Physical Society , 2012, 60(10), P.1639

近期申请的专利


1. 罗谦,刘斌,曾庆平,严慧,甘程,王向展 具有槽型结构的应变PMOSFET及其制作方法,中国, 201210551776.3

2. 罗谦,刘斌,王向展,于奇,严慧 应变沟道鳍式场效应晶体管及其制作方法,中国,201310385577.4

3. 王向展,秦桂霞,罗谦,王微,李竞春 一种MOS晶体管局部应力的引入技术,2013.2,中国,ZL201110268524.5


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