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bob体育官网-bob体育最新版下载地址

徐开凯

邮箱:kaikaix@uestc.edu.cn
电话:028-83208233
系别:集成电路与系统系
职称:研究员
教师个人主页:http://faculty.uestc.edu.cn/xukaikai
教师简介
加州大学欧文分校博士,研究员,bob体育最新版下载地址百人计划入选者,四川省入选者,电子薄膜与集成器件国家重点实验室(bob体育最新版下载地址)成员、新型微纳器件与系统技术国家重点学科实验室(重庆大学)客座成员,国家自然科学基金委*****的起草组成员,IEEE Senior Member (Nomination Committee member:2 IEEE Fellow, 1 IEEE Society President)。
 
徐开凯博士 在半导体光电器件与集成技术领域做出了显著成绩,为推动新型光电传输与CMOS工艺集成技术进步做出了贡献。以第一作者取得成果:在本领域国际知名期刊IEEE JSTQE、IEEE TED、IEEE PJ、IEEE JQE、IEEE/OSA JDT等发表SCI检索论文24篇,SCI引用200余次,做大会主题报告、特邀报告30余次,担任多个光电领域国际会议的TPC member;研究成果受到了同行的肯定,特别是得到了光电集成技术创始人、以色列Ben-Gurion University of the Negev教授Dr. Herzl Aharoni【OSA Fellow、APS Fellow、SPIE Fellow、IOP Fellow、IET Fellow】的认同、被ACS Nano Letters、IEEE Photonics Journal、IEEE Transactions on Electron Devices、IEEE Journal of Quantum Electronics、OSA Optics Express、Journal of Alloys and Compounds等重要刊物正面引用;bob体育最新版下载地址2016年1作且通讯单位论文量作者贡献度统计:第1作者发文量最多的是微固学院徐开凯(7篇)。
在本研究领域,荣获学术奖励3项:1)应用硅材料电光物理的特性,实现硅器件发光强度达到mW量级;基于在本领域应用物理方面的成就,2017年1月,入选American Institute of Physics旗下Journal of Applied Physics的Editorial Advisory Board,是我国仅有3位入选学者之一(另外2位为国家杰青、长江),全球仅15名学者入选;2)实现载流子可控硅器件电光调制GHz量级技术;基于在本领域电子器件方面的成就,2015年12月,在IEEE International Electron Devices Meeting(IEDM)、IEEE EDS Governance Meeting上,入选Member of the IEEE Electron Devices Society Optoelectronic Devices Committee,是全球仅有的11名学者之一;3)实现了全硅光电集成微型光互连技术;基于在本领域全硅光电集成电路方面的成就,2015年5月,在IEEE International Symposium on Circuits and Systems (ISCAS 2015)上,入选著名微电子期刊Microelectronics Journal的Editorial Board,是我国仅有2位入选学者之一(另外1位为集成电路领域2016年度国家杰青)。
这些成绩也得到了本研究领域以National Academy of Engineering(美国国家工程院院士)、Royal Academy of Engineering(英国皇家工程院院士)、以及众多IEEE、OSA、SPIE、APS、AVS、IOP、IET Fellow为代表的同行认可。
 
科学研究


一、主要学术兼职

       国际电气电子工程师协会纳米技术学会 纳光学、纳光子学、纳光电子学委员会 主席 (Chair, the IEEE Nanotechnology Council Nano-Optics, Nano-Photonics, and Nano-Optoelectronics Committee)

       美国光学学会光子学与光电子学学部 激光系统专委会 副主席 (Vice Co-chair, the OSA Photonics and Opto-Electronics Division, Laser Systems Group)

       北美发光工程学会 光源委员会 成员(Member of the Illuminating Engineering Society of North America, Light Sources Committee)

       国际电气电子工程师协会电子器件学会光电子器件委员会 成员(Member of the IEEE Electron Devices Society Optoelectronic Devices Committee)

       SPIE Journal of NanophotonicsAssociate Editor


       EOS Journal of the European Optical Society–Rapid Publications的Associate Editor


       IOP Journal of Physics CommunicationsInternational Editorial Board


       Journal of Nanoelectronics and OptoelectronicsEditorial Board Member


       SID Journal of the Society for Information DisplayAssociate Editor


       Journal of Optoelectronics and Advanced MaterialsAdvisory Board Member


       IET Electronics Letter的Associate Editor


       OSA Applied Optics的Feature Editors


       《电子元件与材料》第一届青年编委

二、学术成果及社会价值

1, 基于场致光发射机理的MOS栅控高效硅发光新结构研究 (国家级项目立项)

巧妙地利用MOSFET栅控原理,设计出了栅控高效硅发光器件,通过栅极引入外加电场,有效调控了硅光源的PN结空间电场,让PN结空间电场分布达到最佳,从而有效地将点击穿区扩展到面击穿,大大提高了发光效率。


2,  基于载流子可控场致光发射硅器件电光调制技术基础研究(国家级项目立项)

通过实现硅波导折射率和吸收系数的调制,借助硅材料特有的半导体特性,从根本上克服了硅波导本身存在较大的结构双折射缺点,在硅波导上实现了调制功能,同时解决了硅基类MOS电光调制器件结构,及器件加工工艺与硅IC兼容的难题,为实现多端口可控硅电光调制,高频响应、集成化全硅电光调制技术提供了有力支撑。


3,  与全硅光电集成电路兼容的甚短间距片上光互联(国家级项目立项)

突破了工艺兼容瓶颈,实现了硅IC兼容片上光互连技术,让新型硅电光调制器加工工艺嵌入到CMOS工艺中,成为高速光互连硅IC加工的一部分,为未来片内光互连发展带来新一轮技术变革。

 

三、研究领域代表性论文  (*表示通讯作者)

[1] Z. Zhang, K. Xu*, J. Yuan, Y. Wang, K. Ogudo, C. Viana, J. Polleux, Q. Yu, L. Snyman, Y. Wang, and R. HuSilicon light-emitting device for high speed analog-to-digital conversion; Journal of Optoelectronics and Advanced Materials, Vol. 18, No. 9-10, September - October 2016, p. 737 - 744

[2] K. Xu*, D. Cheng, and X. Huang;Modal characteristics of coupled resonator vertical cavity laser diode; Advances in Optoelectronic Materials (AOM) Volume 4, 2016

[3] C. Zhang, S. Liu, K. Xu, J. Wei, R. Ye, W. Sun*, W. Su, A. Zhang, S. Ma, F. Lin, and G. Sun;A novel high latch-up immunity electrostatic discharge protection device for power rail in high-voltage ICs; IEEE Transactions on Device and Materials Reliability, vol. 16, no. 2, pp. 266-268, 2016

[4] K. Xu*, K. Ogudo, J. Polleux, C. Viana, Z. Ma. Z. Li, Q. Yu, G. Li, and L. Snyman;Light-emitting devices in Si CMOS and RF bipolar integrated circuits; LEUKOS, the journal of the Illuminating Engineering Society, vol. 12, no. 4, pp. 203-212, 2016 (2016 SCI IF: 2.167)

[5] K. Xu*, Z. Zhang, Q. Yu, and Z. Wen;Field-effect electroluminescence spectra of reverse-biased PN Junctions in silicon device for microdisplay; IEEE/OSA Journal of Display Technology, vol. 12, no. 2, pp. 115-121, 2016 (2016 SCI IF: 1.925)

[6] K. Xu*, S. Liu, J. Zhao, W. Sun, and G. Li;A new silicon LED concept for future opto-coupler system applications in short-distance; Optik-International Journal for Light and Electron Optics, vol. 127, no. 5, pp. 2895-2897, 2016

[7] K. Xu*, S. Liu, W. Sun, Z. Ma, Z. Li, Q. Yu, and G. Li;Design and fabrication of a monolithic optoelectronic integrated Si CMOS LED based on hot-carrier effect; IEEE Journal of Selected Topics in Quantum Electronics, vol. 22, no. 6, 2000508, November/December 2016 (2016 SCI IF: 3.466)

[8] K. Xu*;Integrated silicon directly modulated light source using P-Well in standard CMOS technology; IEEE Sensors Journal, vol. 16, no. 16, pp. 6184-6191, 2016 (2016 SCI IF: 1.889)

[9] K. Xu*, Z. Zhang, and Z. Zhang;Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices; Journal of Nanophotonics, vol. 10, no. 1, 016002, Jan-Mar 2016 (2016 SCI IF: 1.488)

[10] K. Xu*, L. Snyman, J. Polleux, K. Ogudo, C. Viana, Q. Yu, and G. Li;Silicon LEDs toward high frequency on-chip link; Optik-International Journal for Light and Electron Optics, vol. 127, no. 17, pp. 7002-7020, 2016

[11] L. Snyman, K. Xu, J. Polleux, K. Ogudo, and C. Viana;Higher intensity SiAvLEDs in a RF bipolar process through carrier energy and carrier momentum engineering; IEEE Journal of Quantum Electronics, vol. 51, no. 7, 3200110, July 2015 (2016 SCI IF: 1.843)

[12] K. Xu*, Q. Yu, and G. Li;Increased efficiency of silicon light-emitting device in standard Si-CMOS technology; IEEE Journal of Quantum Electronics, vol. 51, no. 8, 3000106, August 2015 (2016 SCI IF: 1.843)

[13] K. Xu*, H. Liu, and Z. Zhang;Gate-controlled diode structure based electro-optical interfaces in standard Silicon-CMOS integrated circuitry; Applied Optics, vol. 54, iss. 21, pp. 6420-6424, 2015 (2016 SCI IF: 1.598

[14] K. Xu*, H. Liu, Q. Yu, Z. Wen, and G. Li;On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device; Journal of Optoelectronics and Advanced Materials, vol. 17, no. 11-12, pp. 1680-1688, 2015

[15] K. Xu*, S. Liu, J. Zhao, W. Sun, and G. Li;Analysis of simulation of multi-terminal electro-optic modulator based on p-n junction in reverse bias; Optical Engineering, vol. 54, no. 5, 057104, 2015

[16] K. Xu*, S. Liu, J. Zhao, Q. Yu, W. Sun, and G. Li;Opportunities for employing IGBT in photo-switch based on silicon avalanche LEDs; International Journal of New Computer Architectures and their Applications, vol. 5, no. 3, pp. 119-126, 2015

[17] K. Xu*, L. Snyman, J. Polleux, H. Chen, and G. Li;Silicon light-emitting device with application in on-chip micro-opto-electro-mechanical and chemical-opto-electro micro systems; International Journal of Materials, Mechanics and Manufacturing, vol. 3, no. 4, pp. 282-286, 2015

[18] K. Xu* and Yang Ou;Theoretical and numerical characterization of a 40Gbps long-haul multi-channel transmission system with dispersion compensation; Digital Communications and Networks, vol. 1, iss. 3, pp. 222-228, 2015

[19] K. Xu*;On the design and optimization of three-terminal light-emitting device in silicon CMOS technology; IEEE Journal of Selected Topics in Quantum Electronics, vol. 20, no. 4, 8201208, July/Aug. 2014

[20] K. Xu* et al.;Electro-optical modulation processes in Si-PMOSFET LEDs operating in the avalanche light emission mode; IEEE Transactions on Electron Devices, vol. 61, no. 6, pp. 2085-2092, 2014

[21] K. Xu* and G. Li;Hot-carrier induced photon-emission in silicon metal-oxide-semiconductor field-effect-transistor; Journal of Physics: Conference Series, 488, 132036, 2014

XXVIII International Conference on Photonic, Electronic and Atomic Collisions (ICPEAC 2013)

[22] K. Xu* and G. Li;A novel way to improve the quantum efficiency of silicon light emitting diode in a standard silicon complementary metal-oxide-semiconductor technology; Journal of Applied Physics, 113, 10, 103106, 2013

[23] K. Xu*;Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs; Applied Optics, vol. 52, iss. 27, pp. 6669-6675, 2013

[24] K. Xu* and G. Li;Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology; Journal of Nanophotonics, vol. 7, no. 1, 073082, 2013

[25] K. Xu* and G. Li;A three terminal silicon-PMOSFET like light emitting device (LED) for optical intensity modulation; IEEE Photonics Journal, vol. 4, no. 6, pp. 2159-2168, 2012

Conference Papers

[1] K. Xu, N. Ning, K. Ogudo, J. Polleux, Q. Yu, and L. Snyman;Light emission in silicon: from device physics to applications; International Workshop on Thin-films for Electronics, Electro-Optics, Energy, and Sensors, (TFE3S),2015, Invited paper

[2] K. Xu, S. Wu, Z. Zhang, Q. Yu, X. Huang, Y. Wang, and J. Polleux;A perspective on high speed analogy to digital conversion with silicon light-emitting devices; in 20th OptoElectronics and Communications Conference (OECC 2015) Invited paper

[3] K. Xu, B. Huang, K. Ogudo, L. Snyman, H. Chen, and G. Li;Silicon light-emitting device in standard CMOS technology; in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2015). Invited paper

[4] K. Xu and G. Li;A light-emitting-device (LED) with monolithic integration on bulk silicon in a standard CMOS technology; in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2013.

[5] K. Xu and G. Li;Silicon electro-optic modulator based on the theory of gate-controlled diode; in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2013).

[6] K. Xu and G. Li;The path forward: silicon electro-optical interface for modern complementary metal-oxide-semiconductor integrated circuits (CMOS ICs); in 2nd CIOMP-OSA Summer Session, OSA Technical Digest (online) (Optical Society of America, 2013).

[7] K. Xu and D. Cheng;Modeling and analysis of check-in procedure by simulation; IEEE SMC 2011

[8] K. Xu;Comparison of dispersion compensation in a 40Gbps WDM optical communication system; SPIE Photonics Asia 2010,Invited paper

[9] K. Xu, D. Cheng, and X. Huang;Multimode communication system used in local area network; SOPO 2009

[10] X. Huang, L. Li, K. Xu et al.;An 0.35μm/CMOS 2.4Gb/s LVDS for high-speed DAC; IEEE ASICON 2009

[11] K. Xu, D. Cheng, and K. Li;Super-high speed fiber optical communication systems design and simulation; ICAIT 2008

出版书籍章节

[1] K. Xu;Hot carrier luminescence in silicon metal oxide semiconductor field effect transistor; in Advances in Optoelectronics Research, Nova Science Publisher Inc., New York, Chapter 1, pp. 1-28, 2014

[2] K. Xu, W. Sun, K. Ogudo, L. Snyman, J. Polleux, Q. Yu, and G. Li;Silicon avalanche based light emitting diodes and their potential integration into CMOS and RF integrated circuit technology; in Advances in Optical Communication, Intech, Chapter 5, pp. 115-142, 2014


主讲课程
热忱欢迎对半导体光电器件与集成技术这一研究领域具有远大志向、宏伟目标的同学报考。研究生招生:原则上只考虑211高校的应届本科生。每年拟招收博士研究生2名。

与国内相关科研院所、以美国TOP20、欧洲TOP10为代表的学术科研机构(大学/研究中心)保持密切沟通和联系;确保学术研究处于高水准。