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曾慧中

邮箱:zenghz@uestc.edu.cn
电话:83202291
系别:微电子与固体电子系
职称:副教授
教师个人主页:
教师简介
Associate Professor, UESTC, 2012
Research Assistant, Dept. of Phys., HKU, 2012
PhD. in Materials Physics and Chemistry, UESTC, 2010
Research Assistant, Dept. of Electronic Engineering, CUHK, 2006/2007
 
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office: Weigu building, Rm414
Lab:     Weigu building, Rm113
科学研究

Research Interests


We develope Advanced Scanning Probe Microscopy to study

Ferroic Domain Wall Phenomena, Nanoscale Transport, Interface Traps and etc.



Facilities


Scanning Probe Microscopy


AFM, PFM, cAFM, KSPM,  in high vacuum (1e-5Pa) with variable temperatuure from ~150K to 450K.

Specially, home build PFM modules enable up to 6 channels for simultaneous vertical-, lateral-PFM

and current-AFM.


LN2 cryostat for electrical/magnetic measurement


LHe/LN2 probe station for transport measurement



Location: Weigu building, Rm 113


学术成果

INVITED TALKS
1.    H. Z. Zeng, “Interface charge trapping of ferroelectric/AlGaN/GaN heterostructures”, International Conference on New Theories, Discoveries and Applications of Superconductors and Related Materials,Chongqing, China, Jun 6-8, 2011.
2.    H .Z. Zeng, “Ferroelectric thin films investigated by piezoresonse force microscopy”, MRS Spring Meeting, San Francisco, April 9-13, 2007


SELECTED PUBLICATIONS

[Book chapter]
1.    H. Z. Zeng, J.S. Liu. Nanoscale static and dynamic domain structures of ferroelectric thin films. Trends in Thin Solid Films Research. New York: Nova Science Publishers, 165-192 (2007)


[Journals]
1.    J. H. Zhang, H. Z. Zeng, M. Zhang, W. Liu, Z. F. Zhou, H. W. Chen, C. R. Yang, W. L. Zhang, Y. R. Li, Probe pressure dependence of nanoscale capacitance-voltage characteristic for AlGaN/GaN heterostructures. Review of Scientific Instruments 81(2010) 103704.
2.    H. Z. Zeng, L. Z. Hao, W. B. Luo, X. W. Liao, W. Huang, Y. Lin, Y. R. Li, Trapping properties of LiNbO3/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure characterized by temperature dependent conductance measurements. Journal of Applied Physics 107(2010) 084508.
4.    L. Z. Hao, J. Zhu, W. B. Luo, H. Z. Zeng, Y. R. Li, Y. Zhang, Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure. Applied Physics Letters 96(2010) 032103.
5.    H. Z. Zeng, H. M. Sun, W. B. Luo, W. Huang, Z. H. Wang, Y. R. Li, Nanoscale capacitance spectroscopy characterization of AlGaN/GaN heterostructure by current-sensing atomic force microscopy. Journal of Applied Physics 105(2009) 094319.
6.    L. Z. Hao, J. Zhu, W. B. Luo, H. Z. Zeng, Y. R. Li, W. Huang, X. W. Liao, Y. Zhang, Epitaxial fabrication and memory effect of ferroelectric LiNbO3 film/AlGaN/GaN heterostructure. Applied Physics Letters 95(2009) 232907.
7.    X. H. Wei, Y. R. Li, W. J. Jie, J. L. Tang, H. Z. Zeng, W. Huang, Y. Zhang, J. Zhu, Heteroepitaxial growth of ZnO on perovskite surfaces. Journal of Physics D-Applied Physics 40(2007) 7502.
8.    J. S. Liu, H. Z. Zeng, A. L. Kholkin, Cross-sectional analysis of ferroelectric domains in PZT capacitors via piezoresponse force microscopy. Journal of Physics D-Applied Physics 40(2007) 7053.
9.    J. Shen, H. Z. Zeng, Z. H. Wang, S. B. Lu, H. D. Huang, J. S. Liu, Study of asymmetric charge writing on Pb(Zr,Ti)O-3 thin films by Kelvin probe force microscopy. Applied Surface Science 252(2006) 8018.
10.    J. S. Liu, S. R. Zhang, H. Z. Zeng, C. T. Yang, Y. Yuan, Coercive field dependence of the grain size of ferroelectric films. Physical Review B 72(2005) 172101.


PATENTS

1.    H. Z. Zeng, Z.H. Wang, Y.R. Li, “A position method for cross-sectional analysis of thin films by atomic force microscopy”, Patent in China, ZL200510021649.2, 2005

2.    J. Shen, Z.H. Wang, C.R. Yang, H. Z. Zeng, “A sample holder for cross-sectional atomic force microscopy”, Patent in China, ZL200510021650.5, 2005

3.    Y.R. Li, Z.H. Wang, H. Z. Zeng, “A nanoscale measurement of the local piezoelectric coefficient of thin films based on atomic force microscopy”, Patent in China, #200810147692.7, 2008 (pending)

4.    H. Z. Zeng, R.B Han, Z.H. Wan, Y. Lin, “A local capacitance measurement system for scanning probe microscopy”, Patent in China, #201110078204.3, 2011 (pending)


Last update@2011




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